Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer

10.1109/TED.2004.829861

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Bibliographic Details
Main Authors:	Tan, Y.-N., Chim, W.-K., Cho, B.J., Choi, W.-K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56980
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Institution:	National University of Singapore

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