Sign of tunneling magnetoresistance in Cr O2-based magnetic tunnel junctions

Sign of tunneling magnetoresistance in Cr O2-based magnetic tunnel junctions

10.1063/1.2825475

Saved in:
Bibliographic Details
Main Authors: Leo, T., Kaiser, C., Yang, H., Parkin, S.S.P., Sperlich, M., Güntherodt, G., Smith, D.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57393
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/57393

Similar Items