Single-layer magnetic memory based on Rashba three-terminal quantum dot device

• Main Authors: Xing, M.-J., Li, Y., Jalil, M.B.A., Tan, S.G., Jiang, Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57419
• Institution: National University of Singapore

Journal of Applied Physics