Single-layer magnetic memory based on Rashba three-terminal quantum dot device

Single-layer magnetic memory based on Rashba three-terminal quantum dot device

10.1063/1.3658808

Saved in:
Bibliographic Details
Main Authors: Xing, M.-J., Li, Y., Jalil, M.B.A., Tan, S.G., Jiang, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86709
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/86709

Similar Items