Single-layer magnetic memory based on Rashba three-terminal quantum dot device

10.1063/1.3658808

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Bibliographic Details
Main Authors: Xing, M.-J., Li, Y., Jalil, M.B.A., Tan, S.G., Jiang, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86709
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Institution: National University of Singapore
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