A transient capacitance-voltage method for characterizing DX centres
10.1088/0268-1242/11/12/004
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sg-nus-scholar.10635-617272024-11-10T17:47:42Z A transient capacitance-voltage method for characterizing DX centres Jia, Y.B. Grimmeiss, H.G. Li, M.F. ELECTRICAL ENGINEERING 10.1088/0268-1242/11/12/004 Semiconductor Science and Technology 11 12 1787-1790 SSTEE 2014-06-17T06:43:19Z 2014-06-17T06:43:19Z 1996-12 Article Jia, Y.B., Grimmeiss, H.G., Li, M.F. (1996-12). A transient capacitance-voltage method for characterizing DX centres. Semiconductor Science and Technology 11 (12) : 1787-1790. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/12/004 02681242 http://scholarbank.nus.edu.sg/handle/10635/61727 A1996VY01700004 Scopus |
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10.1088/0268-1242/11/12/004 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Jia, Y.B. Grimmeiss, H.G. Li, M.F. |
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Jia, Y.B. Grimmeiss, H.G. Li, M.F. |
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Jia, Y.B. Grimmeiss, H.G. Li, M.F. A transient capacitance-voltage method for characterizing DX centres |
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Jia, Y.B. |
title |
A transient capacitance-voltage method for characterizing DX centres |
title_short |
A transient capacitance-voltage method for characterizing DX centres |
title_full |
A transient capacitance-voltage method for characterizing DX centres |
title_fullStr |
A transient capacitance-voltage method for characterizing DX centres |
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A transient capacitance-voltage method for characterizing DX centres |
title_sort |
transient capacitance-voltage method for characterizing dx centres |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/61727 |
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