A transient capacitance-voltage method for characterizing DX centres
10.1088/0268-1242/11/12/004
Saved in:
Main Authors: | Jia, Y.B., Grimmeiss, H.G., Li, M.F. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/61727 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
by: Li, M.-f., et al.
Published: (2014) -
Determination of charge transfer resistance and capacitance of microbial fuel cell through a transient response analysis of cell voltage
by: Ha, P.T., et al.
Published: (2014) -
Comment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs"
by: Li, M.F., et al.
Published: (2014) -
Transient capacitance measurements of laser radiation-induced defects in silicon
by: Tan, H.S., et al.
Published: (2014) -
APPLICATION OF THE CENTRE IMPLICIT METHOD FOR INVESTIGATION OF PRESSURE TRANSIENTS IN PIPELINES.
by: Tan, J.K., et al.
Published: (2014)