Annealing behavior of gate oxide leakage current after quasi-breakdown

Microelectronics Reliability

Saved in:
Bibliographic Details
Main Authors: Xu, Z., Cho, B.J., Li, M.F.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61845
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Microelectronics Reliability