Annealing behavior of gate oxide leakage current after quasi-breakdown
Microelectronics Reliability
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sg-nus-scholar.10635-618452015-01-25T22:22:55Z Annealing behavior of gate oxide leakage current after quasi-breakdown Xu, Z. Cho, B.J. Li, M.F. ELECTRICAL ENGINEERING Microelectronics Reliability 40 8-10 1341-1346 MCRLA 2014-06-17T06:44:39Z 2014-06-17T06:44:39Z 2000 Article Xu, Z.,Cho, B.J.,Li, M.F. (2000). Annealing behavior of gate oxide leakage current after quasi-breakdown. Microelectronics Reliability 40 (8-10) : 1341-1346. ScholarBank@NUS Repository. 00262714 http://scholarbank.nus.edu.sg/handle/10635/61845 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
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NUS Library |
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Singapore |
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ScholarBank@NUS |
| description |
Microelectronics Reliability |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Xu, Z. Cho, B.J. Li, M.F. |
| format |
Article |
| author |
Xu, Z. Cho, B.J. Li, M.F. |
| spellingShingle |
Xu, Z. Cho, B.J. Li, M.F. Annealing behavior of gate oxide leakage current after quasi-breakdown |
| author_sort |
Xu, Z. |
| title |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| title_short |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| title_full |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| title_fullStr |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| title_full_unstemmed |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| title_sort |
annealing behavior of gate oxide leakage current after quasi-breakdown |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/61845 |
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1681085667641131008 |