Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs

Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs

10.1016/0038-1101(94)E0040-L

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Bibliographic Details
Main Authors: Pan, Y., Ng, K.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61932
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Institution: National University of Singapore
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Summary:10.1016/0038-1101(94)E0040-L

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