Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs
10.1016/0038-1101(94)E0040-L
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sg-nus-scholar.10635-619322023-10-30T07:52:05Z Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs Pan, Y. Ng, K.K. ELECTRICAL ENGINEERING 10.1016/0038-1101(94)E0040-L Solid-State Electronics 38 1 183-187 SSELA 2014-06-17T06:45:36Z 2014-06-17T06:45:36Z 1995 Article Pan, Y., Ng, K.K. (1995). Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs. Solid-State Electronics 38 (1) : 183-187. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1101(94)E0040-L 00381101 http://scholarbank.nus.edu.sg/handle/10635/61932 A1995QC42000027 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
| description |
10.1016/0038-1101(94)E0040-L |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Pan, Y. Ng, K.K. |
| format |
Article |
| author |
Pan, Y. Ng, K.K. |
| spellingShingle |
Pan, Y. Ng, K.K. Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| author_sort |
Pan, Y. |
| title |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| title_short |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| title_full |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| title_fullStr |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| title_full_unstemmed |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs |
| title_sort |
characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in ldd p-mosfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/61932 |
| _version_ |
1781782122541875200 |