Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations

Journal of Applied Physics

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Main Authors: Choi, W.K., Han, K.K., Choo, C.K., Chim, W.K., Lu, Y.F.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61960
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-619602015-04-21T12:42:08Z Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations Choi, W.K. Han, K.K. Choo, C.K. Chim, W.K. Lu, Y.F. ELECTRICAL ENGINEERING Journal of Applied Physics 83 9 4810-4815 JAPIA 2014-06-17T06:45:53Z 2014-06-17T06:45:53Z 1998-05-01 Article Choi, W.K.,Han, K.K.,Choo, C.K.,Chim, W.K.,Lu, Y.F. (1998-05-01). Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations. Journal of Applied Physics 83 (9) : 4810-4815. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/61960 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Journal of Applied Physics
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Choi, W.K.
Han, K.K.
Choo, C.K.
Chim, W.K.
Lu, Y.F.
format Article
author Choi, W.K.
Han, K.K.
Choo, C.K.
Chim, W.K.
Lu, Y.F.
spellingShingle Choi, W.K.
Han, K.K.
Choo, C.K.
Chim, W.K.
Lu, Y.F.
Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
author_sort Choi, W.K.
title Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
title_short Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
title_full Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
title_fullStr Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
title_full_unstemmed Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
title_sort conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/61960
_version_ 1681085688528764928