Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates
Journal of Applied Physics
Saved in:
Main Authors: | Tomasini, P., Arai, K., Wu, Y.H., Yao, T. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62177 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Femtosecond determination of optical nonlinearities in CdS, GaP, ZaO, ZnS, ZnSe and ZnTe
by: Yin, Ming, et al.
Published: (2014) -
Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures
by: Tomasini, P., et al.
Published: (2014) -
Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures
by: Tomasini, P., et al.
Published: (2014) -
Multiphoton Absorption and Multiphoton Excited Photoluminescence in Transition Metal Doped ZnSe/ZnS Quantum Dots
by: XING GUICHUAN
Published: (2011) -
Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique
by: Jung, H.D., et al.
Published: (2014)