Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique

Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique

Applied Physics Letters

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Bibliographic Details
Main Authors: Jung, H.D., Song, C.D., Wang, S.Q., Arai, K., Wu, Y.H., Zhu, Z., Yao, T., Katayama-Yoshida, H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80312
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80312

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