Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique

• Main Authors: Jung, H.D., Song, C.D., Wang, S.Q., Arai, K., Wu, Y.H., Zhu, Z., Yao, T., Katayama-Yoshida, H.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80312
• Institution: National University of Singapore

Applied Physics Letters