Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

Solid-State Electronics

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書目詳細資料
Main Authors:	Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/62291
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

實物特徵
總結:	Solid-State Electronics