Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Authors: Phua, Cheng Chiang, Chong, Tow Chong, Lau, Wai Shing
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62310
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Institution: National University of Singapore
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