Relaxation of trapped charge at silicon grain boundary states

Solid State Electronics

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Bibliographic Details
Main Authors:	Ling, C.H., Kwok, C.Y., Woo, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62703
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62703
record_format	dspace
spelling	sg-nus-scholar.10635-627032015-04-06T10:46:26Z Relaxation of trapped charge at silicon grain boundary states Ling, C.H. Kwok, C.Y. Woo, P.K. ELECTRICAL ENGINEERING Solid State Electronics 30 3 247-252 SSELA 2014-06-17T06:53:57Z 2014-06-17T06:53:57Z 1987-03 Article Ling, C.H.,Kwok, C.Y.,Woo, P.K. (1987-03). Relaxation of trapped charge at silicon grain boundary states. Solid State Electronics 30 (3) : 247-252. ScholarBank@NUS Repository. 00381101 http://scholarbank.nus.edu.sg/handle/10635/62703 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Solid State Electronics
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H. Kwok, C.Y. Woo, P.K.
format	Article
author	Ling, C.H. Kwok, C.Y. Woo, P.K.
spellingShingle	Ling, C.H. Kwok, C.Y. Woo, P.K. Relaxation of trapped charge at silicon grain boundary states
author_sort	Ling, C.H.
title	Relaxation of trapped charge at silicon grain boundary states
title_short	Relaxation of trapped charge at silicon grain boundary states
title_full	Relaxation of trapped charge at silicon grain boundary states
title_fullStr	Relaxation of trapped charge at silicon grain boundary states
title_full_unstemmed	Relaxation of trapped charge at silicon grain boundary states
title_sort	relaxation of trapped charge at silicon grain boundary states
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62703
_version_	1681085824249102336

Relaxation of trapped charge at silicon grain boundary states

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