Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

10.1016/j.sse.2005.04.014

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Bibliographic Details
Main Authors: Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/64542
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Institution: National University of Singapore