Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

10.1016/j.sse.2005.04.014

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Bibliographic Details
Main Authors:	Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
Other Authors:	CHEMICAL & BIOMOLECULAR ENGINEERING
Format:	Article
Published:	2014
Subjects:	Binary collision approximation Channelling Monte Carlo Pearson IV Sampling calibration of profiles
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/64542
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-64542
record_format	dspace
spelling	sg-nus-scholar.10635-645422023-10-27T09:05:27Z Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations Chan, H.Y. Srinivasan, M.P. Benistant, F. Jin, H.M. Chan, L. CHEMICAL & BIOMOLECULAR ENGINEERING Binary collision approximation Channelling Monte Carlo Pearson IV Sampling calibration of profiles 10.1016/j.sse.2005.04.014 Solid-State Electronics 49 7 1241-1247 SSELA 2014-06-17T07:48:28Z 2014-06-17T07:48:28Z 2005-07 Article Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L. (2005-07). Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations. Solid-State Electronics 49 (7) : 1241-1247. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2005.04.014 00381101 http://scholarbank.nus.edu.sg/handle/10635/64542 000230709100029 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Binary collision approximation Channelling Monte Carlo Pearson IV Sampling calibration of profiles
spellingShingle	Binary collision approximation Channelling Monte Carlo Pearson IV Sampling calibration of profiles Chan, H.Y. Srinivasan, M.P. Benistant, F. Jin, H.M. Chan, L. Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
description	10.1016/j.sse.2005.04.014
author2	CHEMICAL & BIOMOLECULAR ENGINEERING
author_facet	CHEMICAL & BIOMOLECULAR ENGINEERING Chan, H.Y. Srinivasan, M.P. Benistant, F. Jin, H.M. Chan, L.
format	Article
author	Chan, H.Y. Srinivasan, M.P. Benistant, F. Jin, H.M. Chan, L.
author_sort	Chan, H.Y.
title	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_short	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_full	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_fullStr	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_full_unstemmed	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_sort	sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 kev using monte carlo simulations
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/64542
_version_	1781782439698366464

Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

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