Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

10.1103/PhysRevLett.104.137201

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Bibliographic Details
Main Authors: Yi, J.B., Lim, C.C., Xing, G.Z., Fan, H.M., Van, L.H., Huang, S.L., Yang, K.S., Huang, X.L., Qin, X.B., Wang, B.Y., Wu, T., Wang, L., Zhang, H.T., Gao, X.Y., Liu, T., Wee, A.T.S., Feng, Y.P., Ding, J.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/64881
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/64881

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