Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

10.1103/PhysRevLett.104.137201

Saved in:

Bibliographic Details
Main Authors:	Yi, J.B., Lim, C.C., Xing, G.Z., Fan, H.M., Van, L.H., Huang, S.L., Yang, K.S., Huang, X.L., Qin, X.B., Wang, B.Y., Wu, T., Wang, L., Zhang, H.T., Gao, X.Y., Liu, T., Wee, A.T.S., Feng, Y.P., Ding, J.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/64881
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-64881
record_format	dspace
spelling	sg-nus-scholar.10635-648812024-11-13T20:57:20Z Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO Yi, J.B. Lim, C.C. Xing, G.Z. Fan, H.M. Van, L.H. Huang, S.L. Yang, K.S. Huang, X.L. Qin, X.B. Wang, B.Y. Wu, T. Wang, L. Zhang, H.T. Gao, X.Y. Liu, T. Wee, A.T.S. Feng, Y.P. Ding, J. PHYSICS MATERIALS SCIENCE AND ENGINEERING SINGAPORE SYNCHROTRON LIGHT SOURCE NUS NANOSCIENCE & NANOTECH INITIATIVE 10.1103/PhysRevLett.104.137201 Physical Review Letters 104 13 - PRLTA 2014-06-17T07:58:35Z 2014-06-17T07:58:35Z 2010-03-29 Article Yi, J.B., Lim, C.C., Xing, G.Z., Fan, H.M., Van, L.H., Huang, S.L., Yang, K.S., Huang, X.L., Qin, X.B., Wang, B.Y., Wu, T., Wang, L., Zhang, H.T., Gao, X.Y., Liu, T., Wee, A.T.S., Feng, Y.P., Ding, J. (2010-03-29). Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO. Physical Review Letters 104 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.104.137201 00319007 http://scholarbank.nus.edu.sg/handle/10635/64881 000276260800041 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1103/PhysRevLett.104.137201
author2	PHYSICS
author_facet	PHYSICS Yi, J.B. Lim, C.C. Xing, G.Z. Fan, H.M. Van, L.H. Huang, S.L. Yang, K.S. Huang, X.L. Qin, X.B. Wang, B.Y. Wu, T. Wang, L. Zhang, H.T. Gao, X.Y. Liu, T. Wee, A.T.S. Feng, Y.P. Ding, J.
format	Article
author	Yi, J.B. Lim, C.C. Xing, G.Z. Fan, H.M. Van, L.H. Huang, S.L. Yang, K.S. Huang, X.L. Qin, X.B. Wang, B.Y. Wu, T. Wang, L. Zhang, H.T. Gao, X.Y. Liu, T. Wee, A.T.S. Feng, Y.P. Ding, J.
spellingShingle	Yi, J.B. Lim, C.C. Xing, G.Z. Fan, H.M. Van, L.H. Huang, S.L. Yang, K.S. Huang, X.L. Qin, X.B. Wang, B.Y. Wu, T. Wang, L. Zhang, H.T. Gao, X.Y. Liu, T. Wee, A.T.S. Feng, Y.P. Ding, J. Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
author_sort	Yi, J.B.
title	Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
title_short	Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
title_full	Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
title_fullStr	Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
title_full_unstemmed	Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
title_sort	ferromagnetism in dilute magnetic semiconductors through defect engineering: li-doped zno
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/64881
_version_	1821213622429286400

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

Similar Items