High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

10.1109/TMAG.2004.830199

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Bibliographic Details
Main Authors:	Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Han, G.C., An, L.H., Luo, P., Guo, Z.B.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Giant magnetoresistance (GMR) effect Magnetic random access memory (MRAM) Spin-valve Synthetic ferrimagnetic (SF) layer
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70473
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Institution:	National University of Singapore

Description
Summary:	10.1109/TMAG.2004.830199

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