High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

• Main Authors: Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Han, G.C., An, L.H., Luo, P., Guo, Z.B.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Giant magnetoresistance (GMR) effect; Magnetic random access memory (MRAM); Spin-valve; Synthetic ferrimagnetic (SF) layer
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70473
• Institution: National University of Singapore

10.1109/TMAG.2004.830199