Multilevel magnetoresistive random access memory written at curie point

Multilevel magnetoresistive random access memory written at curie point

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Bibliographic Details
Main Authors: Zheng, Y.K., Wu, Y.H., Qiu, J.J., Guo, Z.B., Han, G.C., Li, K.B., Lu, Z.Q., Xie, H., Luo, P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71046
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71046

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