Multistate per-cell magnetoresistive random-access memory written at curie point

• Main Authors: Zheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Giant magnetoresistance; Magnetic tunnel junctions; Magnetoresistive random-access memory; Spin valves; Thermal-assistant writing
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71070
• Institution: National University of Singapore

10.1109/TMAG.2002.802858