Multistate per-cell magnetoresistive random-access memory written at curie point

10.1109/TMAG.2002.802858

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Bibliographic Details
Main Authors:	Zheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Giant magnetoresistance Magnetic tunnel junctions Magnetoresistive random-access memory Spin valves Thermal-assistant writing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71070
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71070
record_format	dspace
spelling	sg-nus-scholar.10635-710702023-10-27T07:53:25Z Multistate per-cell magnetoresistive random-access memory written at curie point Zheng, Y.K. Wu, Y.H. Guo, Z.B. Han, G.C. Li, K.B. Qiu, J.J. Xie, H. Luo, P. ELECTRICAL & COMPUTER ENGINEERING Giant magnetoresistance Magnetic tunnel junctions Magnetoresistive random-access memory Spin valves Thermal-assistant writing 10.1109/TMAG.2002.802858 IEEE Transactions on Magnetics 38 5 I 2850-2852 IEMGA 2014-06-19T03:19:30Z 2014-06-19T03:19:30Z 2002-09 Conference Paper Zheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P. (2002-09). Multistate per-cell magnetoresistive random-access memory written at curie point. IEEE Transactions on Magnetics 38 (5 I) : 2850-2852. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2002.802858 00189464 http://scholarbank.nus.edu.sg/handle/10635/71070 000178867200316 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Giant magnetoresistance Magnetic tunnel junctions Magnetoresistive random-access memory Spin valves Thermal-assistant writing
spellingShingle	Giant magnetoresistance Magnetic tunnel junctions Magnetoresistive random-access memory Spin valves Thermal-assistant writing Zheng, Y.K. Wu, Y.H. Guo, Z.B. Han, G.C. Li, K.B. Qiu, J.J. Xie, H. Luo, P. Multistate per-cell magnetoresistive random-access memory written at curie point
description	10.1109/TMAG.2002.802858
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zheng, Y.K. Wu, Y.H. Guo, Z.B. Han, G.C. Li, K.B. Qiu, J.J. Xie, H. Luo, P.
format	Conference or Workshop Item
author	Zheng, Y.K. Wu, Y.H. Guo, Z.B. Han, G.C. Li, K.B. Qiu, J.J. Xie, H. Luo, P.
author_sort	Zheng, Y.K.
title	Multistate per-cell magnetoresistive random-access memory written at curie point
title_short	Multistate per-cell magnetoresistive random-access memory written at curie point
title_full	Multistate per-cell magnetoresistive random-access memory written at curie point
title_fullStr	Multistate per-cell magnetoresistive random-access memory written at curie point
title_full_unstemmed	Multistate per-cell magnetoresistive random-access memory written at curie point
title_sort	multistate per-cell magnetoresistive random-access memory written at curie point
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71070
_version_	1781783191784259584

Multistate per-cell magnetoresistive random-access memory written at curie point

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