Multistate per-cell magnetoresistive random-access memory written at curie point

10.1109/TMAG.2002.802858

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Bibliographic Details
Main Authors: Zheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/71070
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Institution: National University of Singapore

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