Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

10.1109/ICPE.2011.5944472

Saved in:

Bibliographic Details
Main Authors:	Wei, G., Liang, Y.C., Samudra, G.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71559
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-71559
record_format	dspace
spelling	sg-nus-scholar.10635-715592024-11-11T08:20:10Z Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices Wei, G. Liang, Y.C. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor 10.1109/ICPE.2011.5944472 8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia 1464-1468 2014-06-19T03:25:05Z 2014-06-19T03:25:05Z 2011 Conference Paper Wei, G.,Liang, Y.C.,Samudra, G.S. (2011). Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices. 8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia : 1464-1468. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICPE.2011.5944472" target="_blank">https://doi.org/10.1109/ICPE.2011.5944472</a> 9781612849560 http://scholarbank.nus.edu.sg/handle/10635/71559 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor
spellingShingle	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor Wei, G. Liang, Y.C. Samudra, G.S. Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
description	10.1109/ICPE.2011.5944472
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wei, G. Liang, Y.C. Samudra, G.S.
format	Conference or Workshop Item
author	Wei, G. Liang, Y.C. Samudra, G.S.
author_sort	Wei, G.
title	Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
title_short	Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
title_full	Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
title_fullStr	Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
title_full_unstemmed	Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
title_sort	realistic simulation on reverse characteristics of sic/gan p-n junctions for high power semiconductor devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71559
_version_	1821184075571920896

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Similar Items