Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

• Main Authors: Chi, D.Z., Yao, H.B., Liew, S.L., Tan, C.C., Chua, C.T., Chua, K.C., Li, R., Lee, S.J.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/71716
• 機構: National University of Singapore

10.1109/IWJT.2007.4279954