Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors
Materials Research Society Symposium Proceedings
Saved in:
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71874 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-71874 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-718742024-11-08T16:45:23Z Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors Yeo, Y.-C. Ang, K.-W. Lin, J. Lam, C.-S. ELECTRICAL & COMPUTER ENGINEERING Materials Research Society Symposium Proceedings 995 1-6 MRSPD 2014-06-19T03:28:49Z 2014-06-19T03:28:49Z 2007 Conference Paper Yeo, Y.-C.,Ang, K.-W.,Lin, J.,Lam, C.-S. (2007). Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors. Materials Research Society Symposium Proceedings 995 : 1-6. ScholarBank@NUS Repository. 9781605604275 02729172 http://scholarbank.nus.edu.sg/handle/10635/71874 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
Materials Research Society Symposium Proceedings |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. Ang, K.-W. Lin, J. Lam, C.-S. |
| format |
Conference or Workshop Item |
| author |
Yeo, Y.-C. Ang, K.-W. Lin, J. Lam, C.-S. |
| spellingShingle |
Yeo, Y.-C. Ang, K.-W. Lin, J. Lam, C.-S. Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| author_sort |
Yeo, Y.-C. |
| title |
Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| title_short |
Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| title_full |
Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| title_fullStr |
Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| title_full_unstemmed |
Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| title_sort |
strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/71874 |
| _version_ |
1821198456508645376 |