Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors

Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors:	Yeo, Y.-C., Ang, K.-W., Lin, J., Lam, C.-S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71874
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Institution:	National University of Singapore

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