Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

10.1016/S1369-8001(02)00020-3

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Bibliographic Details
Main Authors: Feng, Z.C., Yang, T.R., Hou, Y.T.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
GaN
Infrared reflectance
Non-destructive
Sapphire
Silicon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72699
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/72699

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