The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Bibliographic Details
Main Authors:	Chan, H.Y., Nordlund, K., Peltola, J., Gossmann, H.-J.L., Ma, N.L., Srinivasan, M.P., Benistant, F., Chan, L.
Other Authors:	CHEMICAL & BIOMOLECULAR ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Density Functional Theory Molecular Dynamics Universal potential
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/74780
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-74780
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spelling	sg-nus-scholar.10635-747802023-08-21T09:44:54Z The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation Chan, H.Y. Nordlund, K. Peltola, J. Gossmann, H.-J.L. Ma, N.L. Srinivasan, M.P. Benistant, F. Chan, L. CHEMICAL & BIOMOLECULAR ENGINEERING Density Functional Theory Molecular Dynamics Universal potential Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 228 1-4 SPEC. ISS. 240-244 NIMBE 2014-06-19T06:16:21Z 2014-06-19T06:16:21Z 2005-01 Conference Paper Chan, H.Y., Nordlund, K., Peltola, J., Gossmann, H.-J.L., Ma, N.L., Srinivasan, M.P., Benistant, F., Chan, L. (2005-01). The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 228 (1-4 SPEC. ISS.) : 240-244. ScholarBank@NUS Repository. 0168583X http://scholarbank.nus.edu.sg/handle/10635/74780 000226669800040 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Density Functional Theory Molecular Dynamics Universal potential
spellingShingle	Density Functional Theory Molecular Dynamics Universal potential Chan, H.Y. Nordlund, K. Peltola, J. Gossmann, H.-J.L. Ma, N.L. Srinivasan, M.P. Benistant, F. Chan, L. The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
description	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
author2	CHEMICAL & BIOMOLECULAR ENGINEERING
author_facet	CHEMICAL & BIOMOLECULAR ENGINEERING Chan, H.Y. Nordlund, K. Peltola, J. Gossmann, H.-J.L. Ma, N.L. Srinivasan, M.P. Benistant, F. Chan, L.
format	Conference or Workshop Item
author	Chan, H.Y. Nordlund, K. Peltola, J. Gossmann, H.-J.L. Ma, N.L. Srinivasan, M.P. Benistant, F. Chan, L.
author_sort	Chan, H.Y.
title	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
title_short	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
title_full	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
title_fullStr	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
title_full_unstemmed	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
title_sort	effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/74780
_version_	1776257494115418112

The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

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