SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion

SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion

Conference Proceedings from the International Symposium for Testing and Failure Analysis

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Main Authors: Huang, Y., Zhu, L., Ong, K., Teo, H., Chen, S., Hua, Y., Shen, M., Gong, H.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/75248
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Institution: National University of Singapore
id sg-nus-scholar.10635-75248
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spelling sg-nus-scholar.10635-752482024-11-10T12:34:53Z SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion Huang, Y. Zhu, L. Ong, K. Teo, H. Chen, S. Hua, Y. Shen, M. Gong, H. MATERIALS SCIENCE AND ENGINEERING Conference Proceedings from the International Symposium for Testing and Failure Analysis 290-292 2014-06-19T09:34:12Z 2014-06-19T09:34:12Z 2012 Conference Paper Huang, Y.,Zhu, L.,Ong, K.,Teo, H.,Chen, S.,Hua, Y.,Shen, M.,Gong, H. (2012). SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 290-292. ScholarBank@NUS Repository. 9781615039791 http://scholarbank.nus.edu.sg/handle/10635/75248 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Conference Proceedings from the International Symposium for Testing and Failure Analysis
author2 MATERIALS SCIENCE AND ENGINEERING
author_facet MATERIALS SCIENCE AND ENGINEERING
Huang, Y.
Zhu, L.
Ong, K.
Teo, H.
Chen, S.
Hua, Y.
Shen, M.
Gong, H.
format Conference or Workshop Item
author Huang, Y.
Zhu, L.
Ong, K.
Teo, H.
Chen, S.
Hua, Y.
Shen, M.
Gong, H.
spellingShingle Huang, Y.
Zhu, L.
Ong, K.
Teo, H.
Chen, S.
Hua, Y.
Shen, M.
Gong, H.
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
author_sort Huang, Y.
title SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
title_short SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
title_full SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
title_fullStr SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
title_full_unstemmed SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
title_sort sims analysis for the threshold voltage shift of power mos caused by abnormal dopant diffusion
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/75248
_version_ 1821202459192721408

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