A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's

A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's

10.1109/55.596926

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Bibliographic Details
Main Authors: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80276
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Institution: National University of Singapore
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Summary:10.1109/55.596926

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