A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's

10.1109/55.596926

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Main Authors:	Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80276
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-802762023-10-25T23:06:13Z A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y. ELECTRICAL ENGINEERING 10.1109/55.596926 IEEE Electron Device Letters 18 7 327-329 EDLED 2014-10-07T02:55:44Z 2014-10-07T02:55:44Z 1997-07 Article Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1997-07). A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's. IEEE Electron Device Letters 18 (7) : 327-329. ScholarBank@NUS Repository. https://doi.org/10.1109/55.596926 07413106 http://scholarbank.nus.edu.sg/handle/10635/80276 A1997XG99700007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/55.596926
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y.
format	Article
author	Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y.
spellingShingle	Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y. A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
author_sort	Lou, C.L.
title	A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
title_short	A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
title_full	A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
title_fullStr	A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
title_full_unstemmed	A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
title_sort	new dc drain-current-conductance method (dccm) for the characterization of effective mobilty (ueff) and series resistances (rs, rd) of fresh and hot-carrier stressed graded junction mosfet's
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80276
_version_	1781783895242440704

A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's

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