Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

Electronics Letters

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Main Authors:	Rao, R.V.V.V.J., Chong, T.C., Lau, W.S., Tan, L.S., Lim, N.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Field effect transistors MISFET Semiconductor devices
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80317
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80317
record_format	dspace
spelling	sg-nus-scholar.10635-803172024-11-13T21:10:36Z Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator Rao, R.V.V.V.J. Chong, T.C. Lau, W.S. Tan, L.S. Lim, N. ELECTRICAL ENGINEERING Field effect transistors MISFET Semiconductor devices Electronics Letters 33 14 1258-1260 ELLEA 2014-10-07T02:56:12Z 2014-10-07T02:56:12Z 1997-07-03 Article Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Lim, N. (1997-07-03). Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator. Electronics Letters 33 (14) : 1258-1260. ScholarBank@NUS Repository. 00135194 http://scholarbank.nus.edu.sg/handle/10635/80317 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Field effect transistors MISFET Semiconductor devices
spellingShingle	Field effect transistors MISFET Semiconductor devices Rao, R.V.V.V.J. Chong, T.C. Lau, W.S. Tan, L.S. Lim, N. Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
description	Electronics Letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Rao, R.V.V.V.J. Chong, T.C. Lau, W.S. Tan, L.S. Lim, N.
format	Article
author	Rao, R.V.V.V.J. Chong, T.C. Lau, W.S. Tan, L.S. Lim, N.
author_sort	Rao, R.V.V.V.J.
title	Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
title_short	Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
title_full	Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
title_fullStr	Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
title_full_unstemmed	Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
title_sort	characteristics of gaas misfet devices using low-temperature-grown al0.3ga0.7as as gate insulator
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80317
_version_	1821221097180233728

Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

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