Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

Electronics Letters

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Bibliographic Details
Main Authors: Rao, R.V.V.V.J., Chong, T.C., Lau, W.S., Tan, L.S., Lim, N.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Field effect transistors
MISFET
Semiconductor devices
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80317
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80317

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