Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs

Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs

International Journal of Optoelectronics

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Bibliographic Details
Main Authors: Chua, S.J., Ramam, A., Lim, N., Gopalakrishnan, R., Tan, K.L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80364
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Institution: National University of Singapore
Description
Summary:International Journal of Optoelectronics

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