Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs
International Journal of Optoelectronics
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sg-nus-scholar.10635-803642015-01-07T06:02:27Z Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs Chua, S.J. Ramam, A. Lim, N. Gopalakrishnan, R. Tan, K.L. ELECTRICAL ENGINEERING INSTITUTE OF MICROELECTRONICS PHYSICS International Journal of Optoelectronics 10 4 265-268 IJOOE 2014-10-07T02:56:43Z 2014-10-07T02:56:43Z 1996 Article Chua, S.J.,Ramam, A.,Lim, N.,Gopalakrishnan, R.,Tan, K.L. (1996). Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs. International Journal of Optoelectronics 10 (4) : 265-268. ScholarBank@NUS Repository. 09525432 http://scholarbank.nus.edu.sg/handle/10635/80364 NOT_IN_WOS Scopus |
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International Journal of Optoelectronics |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Chua, S.J. Ramam, A. Lim, N. Gopalakrishnan, R. Tan, K.L. |
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Chua, S.J. Ramam, A. Lim, N. Gopalakrishnan, R. Tan, K.L. |
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Chua, S.J. Ramam, A. Lim, N. Gopalakrishnan, R. Tan, K.L. Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
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Chua, S.J. |
title |
Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
title_short |
Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
title_full |
Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
title_fullStr |
Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
title_full_unstemmed |
Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs |
title_sort |
double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of ingaalas |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80364 |
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1681088873877209088 |