Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

Solid State Electronics

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Bibliographic Details
Main Authors: Ling, C.H., Kwok, C.Y., Chan, E.G., Tay, T.M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80454
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Institution: National University of Singapore
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