Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Japanese Journal of Applied Physics, Part 2: Letters

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Main Authors: Phua, Cheng Chiang, Chong, Tow Chong, Lau, Wai Shing
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80569
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-805692015-04-05T22:29:07Z Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer Phua, Cheng Chiang Chong, Tow Chong Lau, Wai Shing ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 33 3 B L405-L408 JAPLD 2014-10-07T02:58:57Z 2014-10-07T02:58:57Z 1994 Article Phua, Cheng Chiang,Chong, Tow Chong,Lau, Wai Shing (1994). Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer. Japanese Journal of Applied Physics, Part 2: Letters 33 (3 B) : L405-L408. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80569 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 2: Letters
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Phua, Cheng Chiang
Chong, Tow Chong
Lau, Wai Shing
format Article
author Phua, Cheng Chiang
Chong, Tow Chong
Lau, Wai Shing
spellingShingle Phua, Cheng Chiang
Chong, Tow Chong
Lau, Wai Shing
Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
author_sort Phua, Cheng Chiang
title Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
title_short Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
title_full Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
title_fullStr Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
title_full_unstemmed Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer
title_sort improved crystalline quality of molecular beam epitaxy grown gaas-on-si epilayer through the use of low-temperature gaas intermediate layer
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80569
_version_ 1681088912016015360

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