Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETs

10.1088/0268-1242/15/2/311

Saved in:
Bibliographic Details
Main Authors: Rajendran, K., Samudra, G.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80744
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Be the first to leave a comment!
You must be logged in first