Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETs

10.1088/0268-1242/15/2/311

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Bibliographic Details
Main Authors: Rajendran, K., Samudra, G.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80744
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Institution: National University of Singapore

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