New hole negative differential resistance strained-layer device

New hole negative differential resistance strained-layer device

Materials Science and Engineering B

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Bibliographic Details
Main Authors: Sheng, H., Chua, S.-J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Gallium arsenide
Indium arsenide
Quantum well
Tunnelling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80804
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Institution: National University of Singapore
Description
Summary:Materials Science and Engineering B

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