New hole negative differential resistance strained-layer device
Materials Science and Engineering B
Saved in:
Main Authors: | Sheng, H., Chua, S.-J. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80804 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
New hole negative differential resistance strained-layer device
by: Sheng, H., et al.
Published: (2014) -
Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation
by: Estacio, E., et al.
Published: (2011) -
Action spectra of gaas/algaas multiple quantum wells exhibiting terahertz emission peak at excitation energies below the bandgap
by: Estacio, Elmer, et al.
Published: (2007) -
First-principles study of structural, electronic, and optical properties of GaAs (001)- (2x4) with surface defects
by: Bacuyag, Dhonny P.
Published: (2023) -
Structural property analysis of GaN grown on GaAs by movpe using transmission electron microscopy
by: Siripen Suandon
Published: (2008)