Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing

Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing

Materials Science Forum

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Bibliographic Details
Main Authors: Prakash, S., Tan, L.S., Ng, K.M., Raman, A., Chua, S.J., Wee, A.T.S., Lim, S.L.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80856
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Institution: National University of Singapore
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Summary:Materials Science Forum

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