Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing
Materials Science Forum
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sg-nus-scholar.10635-808562015-01-05T20:23:21Z Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing Prakash, S. Tan, L.S. Ng, K.M. Raman, A. Chua, S.J. Wee, A.T.S. Lim, S.L. PHYSICS ELECTRICAL ENGINEERING Materials Science Forum 338 II/- MSFOE 2014-10-07T03:02:04Z 2014-10-07T03:02:04Z 2000 Article Prakash, S.,Tan, L.S.,Ng, K.M.,Raman, A.,Chua, S.J.,Wee, A.T.S.,Lim, S.L. (2000). Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing. Materials Science Forum 338 : II/-. ScholarBank@NUS Repository. 02555476 http://scholarbank.nus.edu.sg/handle/10635/80856 NOT_IN_WOS Scopus |
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PHYSICS Prakash, S. Tan, L.S. Ng, K.M. Raman, A. Chua, S.J. Wee, A.T.S. Lim, S.L. |
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Prakash, S. Tan, L.S. Ng, K.M. Raman, A. Chua, S.J. Wee, A.T.S. Lim, S.L. |
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Prakash, S. Tan, L.S. Ng, K.M. Raman, A. Chua, S.J. Wee, A.T.S. Lim, S.L. Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
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Prakash, S. |
title |
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
title_short |
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
title_full |
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
title_fullStr |
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
title_full_unstemmed |
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
title_sort |
ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80856 |
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