Relaxation of trapped charge at silicon grain boundary states

Solid State Electronics

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Bibliographic Details
Main Authors:	Ling, C.H., Kwok, C.Y., Woo, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81087
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81087
record_format	dspace
spelling	sg-nus-scholar.10635-810872015-01-12T13:22:28Z Relaxation of trapped charge at silicon grain boundary states Ling, C.H. Kwok, C.Y. Woo, P.K. ELECTRICAL ENGINEERING Solid State Electronics 30 3 247-252 SSELA 2014-10-07T03:04:32Z 2014-10-07T03:04:32Z 1987-03 Article Ling, C.H.,Kwok, C.Y.,Woo, P.K. (1987-03). Relaxation of trapped charge at silicon grain boundary states. Solid State Electronics 30 (3) : 247-252. ScholarBank@NUS Repository. 00381101 http://scholarbank.nus.edu.sg/handle/10635/81087 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Solid State Electronics
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H. Kwok, C.Y. Woo, P.K.
format	Article
author	Ling, C.H. Kwok, C.Y. Woo, P.K.
spellingShingle	Ling, C.H. Kwok, C.Y. Woo, P.K. Relaxation of trapped charge at silicon grain boundary states
author_sort	Ling, C.H.
title	Relaxation of trapped charge at silicon grain boundary states
title_short	Relaxation of trapped charge at silicon grain boundary states
title_full	Relaxation of trapped charge at silicon grain boundary states
title_fullStr	Relaxation of trapped charge at silicon grain boundary states
title_full_unstemmed	Relaxation of trapped charge at silicon grain boundary states
title_sort	relaxation of trapped charge at silicon grain boundary states
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81087
_version_	1681089007587426304

Relaxation of trapped charge at silicon grain boundary states

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